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    Materials Photo
    InP Single Crystal
    Update Time : 2020-06-17 View : 2252
    InP Single crystal substrate
    InP Single crystal material is one of the most important compound semiconductor materials, which is the key material in optical fiber communication technology. Based on InP, laser diode (LD), light-emitting diode (LED) and photodetector realize the functions of information transmitting, transmitting, amplifying and receiving in optical fiber communication. InP is also very suitable for high frequency devices, such as high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT). Due to its advantages, InP has been widely used in many high-tech fields, such as optical fiber communication, microwave, millimeter wave, anti radiation solar cell, heterocrystal tube and so on
    Growth method
    Liquid seal extraction LEC
    crystal structure
    cube
    Lattice constant (nm)
    0. 587
    Crystallographic orientation
    < 100 >, < 110 >, < 111 > ± 0.5 o, or special direction
    Doping degree
    Light, medium and heavy admixtures
    Dopant element
    Undoped
    S-doped
    Zn doping
    Te doping
    Conductive type
    N
    N
    P
    N
    Band gap (EV)
    one point three four
    Resistivity (Ω· cm)
    Mobility (cm2 / (V · s))
    (3.5-4)×103
    (2.0-2.4)×103
    (1.3-1.6)×103
    70-90
    ≥2000
    Carrier density (/ cm3)
    (0.4-2)×1016
    (0.8-3)×1018
    (4-6)×1018
    (0.6-2)×1018
    107-108
    Dislocation density (EPD) (/ cm2)
    <5×104
    3×104
    2×103
    2×104
    3×104
    size
    Φ 2 ″× 0.5mm, Φ 3 ″× 0.5mm, special direction and size can be customized according to customer requirements
    surface
    Single, double or cutting
    Thickness (UM)
    500, thickness tolerance + - 10um, customizable
    TTV (Total Thickness
    Variation)
    TIR (Total Indicated
    Reading)
    Bow
    Warp
    packing
    Class 100 clean bag, class 1000 super clean room

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