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    Indium arsenide InAs
    Update Time : 2020-06-17 View : 1768

    As a substrate, indium arsenide InAs single crystal substrate can not only grow InAsSb / in aspsb, innassb and other heterojunction materials, but also be used to fabricate infrared light-emitting devices with wavelength range of 2-14 μ m, epitaxial growth of AlGaSb superlattice structure materials, and fabrication of mid infrared quantum cascade lasers. Infrared light-emitting devices and infrared lasers have very good application prospects in gas monitoring, low loss fiber communication and other fields. InAs single crystal has high electron mobility and is also an ideal material for Hall devices.

    Growth method
    Liquid seal extraction LEC
    crystal structure
    cube
    Lattice constant (nm)
    zero point six zero six
    Crystallographic orientation
    < 100 >, < 110 >, < 111 > ± 0.5 o, or special direction
    Doping degree
    Dopant element
    Undoped
    Sn doping
    Zn doping
    S-doped
    Conductive type
    N
    N
    P
    N
    Band gap (EV)
    zero point three five four
    Resistivity (Ω· cm)
    Mobility (cm2 / (V · s))
    2×104
    >2000
    100-300
    >2000
    Carrier density (/ cm3)
    5×1016
    (5-20)×1017
    (1-20)×1017
    (1-10)×1017
    Dislocation density (EPD (/ cm2)
    <5×104
    size
    Φ 2 ″× 0.5mm, Φ 3 ″× 0.5mm, special direction and size can be customized according to customer requirements
    surface
    Single, double or cutting
    Thickness (UM)
    500, thickness tolerance + - 10um, customizable
    TTV (Total Thickness
    Variation)
    TIR (Total Indicated
    Reading)
    Bow
    Warp
    packing
    Class 100 clean bag, class 1000 super clean room

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