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    Materials Photo
    InSb single crystal substrate
    Update Time : 2020-06-17 View : 1738


    InSb is an important compound semiconductor, which is mainly used in far-infrared photodetectors, Hall devices and magnetoresistive devices.
    Growth method
    Tirafa
    crystal structure
    cube
    Lattice constant (nm)
    0. 648
    Crystallographic orientation
    < 100 >, < 110 >, < 111 > ± 0.5 o, or special direction
    Doping degree
    Dopant element
    Undoped
    Te doping
    Ge doping
    Conductive type
    N
    N
    P
    Band gap (EV)
    zero point one eight
    Resistivity (Ω· cm)
    Mobility (cm2 / (V · s))
    Carrier density (/ cm3)
    1~5×1014
    1~2×1015
    Dislocation density (EPD) (/ cm2)
    <2×102
    size
    Φ 2 ″× 0.5 special direction and size can be customized according to customer requirements
    surface
    Single, double, or cutting
    Thickness (UM)
    Φ 2 ″× 0.5mm, Φ 3 ″× 0.5mm, customized
    TTV (Total Thickness
    Variation)
    TIR (Total Indicated
    Reading)
    Bow
    Warp
    packing
    Class 100 clean bag, class 1000 super clean room

    InSb是一种重要的化合物半导体,主要用于制作远红外光电探测器、霍耳器件和磁阻器件。

     

    生长方法

    提拉法

    晶体结构

    立方

    晶格常数(nm)

    0. 648

    晶向

    <100>、<110>、<111>±0.5o、或特殊方向

    掺杂程度

     

    掺杂元素

    不掺杂

    掺Te

    掺Ge

    导电类型

    N

    N

    P

    带隙(eV)

    0.18

    电阻率(Ω·cm)




    迁移率(cm2/(v·s))




    载流子密度(/cm3

    1~5×1014

    1~2×1015


    位错密度(EPD)(/cm2

    <2×102

    尺寸

    Φ2″×0.5可按照客户需求,定制特殊方向和尺寸

    表面

    单抛片、双抛片、或切割片

    厚度(um)

    Φ2″×0.5mm、Φ3″×0.5mm,可定制

    TTV (Total Thickness

    Variation)


    TIR (Total Indicated

    Reading)


    Bow


    Warp


    包装

    100级洁净袋,1000级超净室

      

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