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    Product
    Materials Photo
    GaN crystal substrate
    Update Time : 2020-06-16 View : 2967

    Gan has the properties of wide direct band gap, strong atomic bond, high thermal conductivity and strong radiation resistance. It is not only a short wave optical electronic material, but also an alternative material for high-temperature semiconductor devices. Gan system can be used to prepare blue and green LED, blue and UV LD, UV detector and high-frequency high-power electronic devices. Gan is easy to mix with AlN, Inn and so on, and can be made into various heterostructures. 2-deg with a mobility of 105cm2 / (V · s) at low temperature has been obtained, effectively shielding the factors such as optical phonon scattering, ionized impurity scattering and piezoelectric scattering.
    Growth method
    HVPE (hydride meteorological epitaxy)
    crystal structure
    Hexagons
    Lattice constant (nm)
    a:0.319     c:0.519
    Crystallographic orientation
    C-axis(0001) ± 0.5°
    Doping degree
    Light, medium and heavy admixtures
    Dopant element
    Conductive type
    N
    Semi-Insulating
    Band gap (EV)
    three point four four
    Resistivity (Ω· cm)
    < 0.5 Ω·cm
    >106Ω·cm
    Mobility (cm2 / (V · s))
    Carrier density (/ cm3)
    Dislocation density (EPD) (/ cm2)
    <5x106
    size
    10.0mm × 10.5mm, 14.0mm × 15.0mm, special direction and size can be customized according to customer requirements
    surface
    Single, double or cutting
    Thickness (UM)
    300 ± 25, 350 ± 25, 400 ± 25, customizable
    TTV (Total Thickness
    Variation)
    TIR (Total Indicated
    Reading)
    Bow
    Warp
    packing
    Class 100 clean bag, class 1000 super clean room

    GaN具有直接带隙宽、原子键强、热导率高和抗辐照能力强等性质,不仅是短波长光电子材料,也是高温半导体器件的替代材料,GaN体系可以用来制备蓝、绿光LED,蓝紫、紫外光LD,紫外探测器以及高频大功率电子器件。GaN易与AlN、InN等构成混晶,能制成各种异质结构,已经得到了低温下迁移率达到105cm2/(v·s)的2-DEG,有效地屏蔽了光学声子散射、电离杂质散射和压电散射等因素。

    生长方法

    HVPE(氢化物气象外延法)

    晶体结构

    六方

    晶格常数(nm)

    a:0.319     c:0.519

    晶向

    C-axis(0001) ± 0.5°

    掺杂程度

    轻掺、中掺、重掺

    掺杂元素

    导电类型

    N

    Semi-Insulating

    带隙(eV)

    3.44

    电阻率(Ω·cm)

    < 0.5 Ω·cm

    >106Ω·cm

    迁移率(cm2/(v·s))



    载流子密度(/cm3



    位错密度(EPD)(/cm2

    <5x106

    尺寸

    10.0mm×10.5mm、14.0mm×15.0mm,可按照客户需求,定制特殊方向和尺寸

    表面

    单抛片、双抛片或切割片

    厚度(um)

    300 ± 25、350 ± 25、400 ± 25,可定制

    TTV (Total Thickness

    Variation)


    TIR (Total Indicated

    Reading)


    Bow


    Warp


    包装

    100级洁净袋,1000级超净室



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