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    Materials Photo
    Gallium phosphide (GAP) crystal substrate, single crystal ch
    Update Time : 2020-06-16 View : 3160

    Gallium phosphide (GAP) is a kind of III-V compound semiconductor synthesized from gallium (GA) and phosphorus (P). At room temperature, its high purity is orange red transparent chemical Book solid. Gallium phosphide is an important material for making semiconductor visible light-emitting devices, which is mainly used for making commutators, transistors, light tubes, laser diodes and cooling elements.


    Basic parameters
    Material: gallium phosphide
    Model: gap
    Characteristics: good insulation
    Application: optics, semiconductor, aviation
    Category: single crystal, polycrystalline, semiconductor
    Brand: Pan American metal
    Process customization: Yes
    Origin: Guangdong
    detailed description
    Product Name:
    Gallium phosphide (GAP) crystal substrate
    Product introduction:
    Technical parameters:
    Crystal structure:
    Cubic a = 5.4505
    Growth method:
    Tirafa
    Density:
    4.13  g/cm3
    Melting point:
    1480 ℃
    Coefficient of thermal expansion:
    5.3 x10-6
    Dopant:
    S-doped; undoped
    Thermal conductivity:
    2~8 x1017/cm3 ;4~ 6 x1016/cm3
    Resistivity w.cm:
    ~0.03 ;~0.3
    EPD (cm-2 ):
    < 3x10E5 ;< 3x10E5
    General dimensions:
    Conventional crystal direction: < 111 >; conventional size: 10x10x0.5mm, dia2 "x0.5mm; polishing condition: single or double polishing;
    Note: the direction and size can be customized according to the customer's requirements.
    remarks:
    Class 1000 super clean room class 100 super clean bag


    基本参数

    材质:磷化镓

    型号:GaP

    特性:绝缘性好

    用途:光学,半导体,航空

    种类:单晶,多晶,半导体

    品牌:泛美金属

    加工定制:是

    产地:广东


    详细说明

    产品名称:

    磷化镓(GaP)晶体基片

    产品简介


    技术参数:

    晶体结构

    立方         a =5.4505

    生长方法:

    提拉法

    密度:

    4.13  g/cm3

    熔点:

    1480

    热膨胀系数

    5.3 x10-6

    掺杂物质

    掺S ;不掺杂

    热传导率

    2~8 x1017/cm3 ;4~ 6 x1016/cm3

    电阻率W.cm

    ~0.03 ;~0.3

    EPD (cm-2 )

    < 3x10E5 ;< 3x10E5


    常规尺寸:

    常规晶向:<111>;常规尺寸:10x10x0.5mm、dia2"x0.5mm;抛光情况:单抛或双抛;

    注:可按客户需求定制相应的方向和尺寸。

    备注:

    1000级超净室100级超净袋

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