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    ???? 2
    Ge wafer
    ?? : 2016-08-24 ?? : 9003

    ??? ??? ?? ?? ??? ? ?? ?? ?? ??? ??? ?, ?? ??? ??, ?? ? ???? ??.
    ?? ??? ??, ?? 2 "3" 4 '6 "??? ?? ?? ?? ?? ??? ?? ?? ?? ???.
    Size: 2 "3" 4 '6 "or on customer'requirements
    ???? ?? (100) (111) (110) ?? ??? ??? ??.
    Direction: (100) (111) (110) or on customer'requirements
    ??? ?? n-type / p-type / Undope
    Type: n-type / p-type / Undope
    ??: ??, ?? ???, ?? ???
    Surface: lapping, single side polished, ???? ?? side polished
    ??: 150um~20mm
    Thickness: 150um ~20mm

    典型规格见下表

    Semi-conducting Ge Specifications


    Growth Method VGF
    Dopant n-type: As;   p-type: Ga
    Wafer Shape Round (DIA: 2" 4" 6")
    Surface Orientation** (100)±0.5°

    **Other Orientations maybe available upon request


    Dopant As (n-type) Ga (p-type)
    Resistivity  (?.cm) 0.05-0.25 0.005-0.04
    Etch Pitch Density (cm2) ≤ 300 ≤ 300



    Wafer Diameter (mm) 50.8±0.3 100±0.3
    Thickness (μm) 175±25 175±25
    TTV [P/P] (μm) ≤ 15 ≤ 15
    WARP (μm) ≤ 25 ≤ 25
    IF* (mm) 17±1 32.5±1
    OF (mm) 7±1 18±1
    Polish** E/E, P/E, P/G E/E, P/E, P/G
    Backside Ra (μm)*** < 0.1 < 0.1

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