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    Product
    Materials Photo
    Ge wafer
    Update Time : 2016-08-24 View : 8987

    Can be customized according to customer requirements, various sizes of semiconductor, solar and optical grade germanium.
    Product size in addition to the standard 3 "2" 4 "6", but also in accordance with customer requirements processing custom specifications of various sizes.
    Size: 2 "3" 4 "6" on customer'requirements or
    Crystal to (100) (111) (110) or by customer requirements.
    Direction: (100) (111) (110) on customer'requirements or
    Product type n-type / p-type / Undope
    N-type Type: / p-type / Undope
    Surface: grinding, single throw, double throw
    Lapping single, side polished Double, side polished Surface:
    Thickness: 150um~20mm
    150um ~20mm Thickness:

    典型规格见下表

    Semi-conducting Ge Specifications


    Growth Method VGF
    Dopant n-type: As;   p-type: Ga
    Wafer Shape Round (DIA: 2" 4" 6")
    Surface Orientation** (100)±0.5°

    **Other Orientations maybe available upon request


    Dopant As (n-type) Ga (p-type)
    Resistivity  (?.cm) 0.05-0.25 0.005-0.04
    Etch Pitch Density (cm2) ≤ 300 ≤ 300



    Wafer Diameter (mm) 50.8±0.3 100±0.3
    Thickness (μm) 175±25 175±25
    TTV [P/P] (μm) ≤ 15 ≤ 15
    WARP (μm) ≤ 25 ≤ 25
    IF* (mm) 17±1 32.5±1
    OF (mm) 7±1 18±1
    Polish** E/E, P/E, P/G E/E, P/E, P/G
    Backside Ra (μm)*** < 0.1 < 0.1

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