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    中文 | English | ??? | Deutsch
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    2021 ? ?? ?? ??(Gan)?? ?? ?? ?? ??
    ?? : 2021-08-30 ?? : 576
    Core data of this paper: Gan wafer manufacturing line summary, gallium nitride (GAN) capacity, SiC, Gan electronic power and Gan microwave RF output value, SiC, Gan power electronic device downstream application fields
    Supply side - output value of gallium nitride bucked the trend
    Gallium nitride is an inorganic compound of nitrogen and gallium. It is a direct band gap semiconductor. It has been commonly used in light-emitting diodes since 1990. The structure of this compound is similar to wurtzite and has high hardness. Gallium nitride has a wide energy gap of 3.4 electron volts, which can be used in high-power and high-speed optoelectronic components.
    In terms of Gan power electronics production lines, by the end of 2020, China has 7 Gan on Si wafer manufacturing production lines, and about 4 Gan power electronics production lines are under construction.
    In terms of Gan RF production lines, by the end of 2020, China has five 4-inch Gan on SiC production lines, and about five Gan RF production lines are under construction.
    Figure 1: summary of Gan wafer manufacturing lines in China by the end of 2020
    According to Casa research data, in terms of Gan power electronics, the capacity of Gan on Si epitaxial wafer converted into 6 inches is about 280000 pieces / year, and the capacity of Gan on Si device / module converted into 6 inches is about 220000 pieces / year.
    In terms of Gan microwave RF, the capacity of SiC semi insulating substrate converted into 4 inches is about 180000 pieces / year, the capacity of Gan on SiC epitaxial wafer converted into 4 inches is about 200000 pieces / year, and the capacity of Gan on SiC devices / modules converted into 4 inches is about 160000 pieces / year. In 2020, the growth of downstream application markets such as new energy vehicles, PD fast charging and 5g exceeded expectations, and the commercial supply of existing domestic products could not meet the market demand, especially there was a large gap in SiC Power Electronics and Gan RF. This has also led to a low localization rate in all links of China's third-generation semiconductors, and more than 80% of products depend on imports.
    Figure 2: Statistics of gallium nitride (GAN) production capacity in China by the end of 2020 (unit: 10000 chips / year,%)
    Under the background of weak growth of domestic semiconductor industry, China's third-generation semiconductor industry has achieved contrarian growth. According to the statistics of CASA, the total output value of SiC, Gan electronic power and Gan microwave RF in China will reach 10.55 billion yuan in 2020, with a year-on-year increase of 69.61%.
    Figure 3: output value of SiC, Gan electronic power and Gan microwave RF in China from 2016 to 2020 (unit: 100 million yuan)
    Demand side - national defense is the main demand field of gallium nitride RF devices
    At present, Gan is mainly used in RF and fast charging fields. SiC is mainly used in the field of new energy vehicles and charging piles. China, as the world's largest new energy vehicle market, as downstream Tesla and other brands began to promote SiC solutions, domestic manufacturers also followed up quickly. Vehicle manufacturers represented by BYD began to make an all-round layout to promote the acceleration of the third generation semiconductor devices in the automotive field. The penetration of the third generation semiconductor devices in the field of charging pile is faster than that in the vehicle market, and the main application is DC charging.
    Figure 4: downstream application fields of SiC and Gan power electronic devices in China in 2020 (unit:%)
    (Note: power grid and wind power generation market account for less than 1%, which is not shown in the figure)
    National defense military and aerospace applications are the main application fields of Gan microwave RF devices in China. In 2020, the market scale accounts for 53% of the whole Gan RF device market; The second is wireless infrastructure, with the downstream market accounting for 36%.
    Figure 5: downstream application fields of Gan RF devices in China in 2020 (unit:%)
    Source: prospective industry research institute
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